EPITAXIAL-GROWTH OF PBTIO3 THIN-FILM ON (110)NDGAO3 SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

(001) preferentially oriented PbTiO3 thin films have been grown on (11 0) NdGaO3 substrates by metalorganic chemical vapor deposition (MOCVD) under reduced pressure at 650 degrees C. Atomic force microscopy (AFM ) surface morphology of the as-deposited him showed the evidence of la yer-by-layer growth in the MOCVD process. By using a grazing-angle sca ttering technique, a highly resolved Raman spectrum of the epitaxial P bTiO3 thin film on perovskite substrate was first time recorded. Other microstructure of the film, such as the element composition, the c-do main percentage and the epitaxial nature, were investigated by Rutherf ord backscattering spectrometry (RBS), x-ray theta - 2 theta diffracti on patterns and x-ray phi scans, respectively. All measurements indica te that NdGaO3 single crystal, which used to be a substrate for the gr owth of high-T-c superconducting thin films, is also suitable for the growth of high quality PbTiO3 thin film. This indicates the promising use of the NdGaO for the integration of ferroelectric thin films and s uperconducting electrodes.