Chemisorption and chemical reaction effects on the resistivity of ultrathin gold films at the liquid-solid interface

Citation
Ym. Zhang et al., Chemisorption and chemical reaction effects on the resistivity of ultrathin gold films at the liquid-solid interface, ANALYT CHEM, 71(1), 1999, pp. 119-125
Citations number
73
Categorie Soggetti
Chemistry & Analysis","Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ANALYTICAL CHEMISTRY
ISSN journal
00032700 → ACNP
Volume
71
Issue
1
Year of publication
1999
Pages
119 - 125
Database
ISI
SICI code
0003-2700(19990101)71:1<119:CACREO>2.0.ZU;2-C
Abstract
Ultrathin gold films, with thicknesses between the onset of conductivity (d similar to 5 mn) and the electron mean free path (d similar to 80 nm), dis play surface-sensitive resistivities, which have been exploited to follow t he adsorption and desorption of molecular monolayers at the metal-solution interface with high precision. For nominal Au film thicknesses (d similar t o 40 nm), strongly chemisorbed thiolate monolayers increase the resistivity of the thin Au films by similar to 4%, but weakly adsorbed species, such a s pyridine or phenolate at open circuit, induce no observable change in the Au film resistance. Resistivity measurements implemented with a high-stabi lity current source and high precision digital voltmeter sampling at 1 Hz r esulted in 3 sigma uncertainties in alkanethiolate coverage of 1.4 x 10(-4) monolayer, Surface plasmon resonance measurements, performed simultaneousl y with resistivity measurementsi indicate that changes in resistivity vary monotonically with coverage with three distinct regions: a low-coverage reg ion of heightened adsorbate mobility, an intermediate-coverage region with generally linear behavior, and a chain length-dependent saturation region a t high coverages. Resistivity measurements were also capable of reproducibl y following the chemical state of the Au surface through a complex set of r edox manipulations, demonstrating the versatility of this simple measuremen t.