Crystallization kinetics of amorphous aluminum-tungsten thin films

Crystallization kinetics of the amorphous Al-W thin films under non-isother mal conditions was examined by continuous in situ electrical resistance mea surements in vacuum.. The estimated crystallization temperature of amorphou s films in the composition series of the Al82W18 to Al62W38 compounds range d from 800 K to 920 K, The activation energy for the crystallization and th e Avrami exponent were determined. The results indicated that the crystalli zation mechanism in films with higher tungsten content was a diffusion-cont rolled process, whereas in films with the composition similar to the stoich iometric compound (Al4W), the interface-controlled crystallization probably occurred.