Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum

Ag thin films (similar to 125 nm) were deposited on Br-passivated vicinal ( 4 degrees miscut) Si(lll) surfaces at room temperature under high vacuum co nditions. The films have been characterized by Rutherford backscattering sp ectrometry (RBS) and channeling, X-ray diffraction and transmission electro n microscopy and diffraction measurements. The [111] axis of the Ag epilaye r is tilted from the substrate [111] orientation by 0.4 degrees towards the substrate surface normal. The films are grainy with a mosaic spread of 0.7 4 degrees. The crystal quality of the Ag layer improves and the mosaic spre ad decreases to 0.37 degrees upon annealing in high vacuum at higher temper atures (400 and 500 degrees C) as observed from RBS/channeling and high res olution X-ray diffraction measurements. The tilt angle of the Ag[111] axis and the layer strain also decrease to some extent upon annealing at 500 deg rees C. (C) 1999 Elsevier Science B.V. All rights reserved.