Sketching of preferred energy regime for ion beam assisted epitaxy

Ion mass-and-energy-dependent displacement defects in surface monolayer and underlying bulk have roughly been separated by a simple numerical evaluati on through the binary collision approximation and well-defined threshold of displacement energy for surface and bulk atoms. The simplified form of Kal bitzer's reduced nuclear stopping power was reasonably introduced for the t otal energy loss calculation in the interesting energy range of ion to assi sted epitaxy. An allowed energy window in which only the surface atom is mo vable while bulk damage is forbidden has been obtained as a normal conseque nce. The results are of relevance for the understanding of the microcrystal line and amorphous structure of the films deposited by ion beam assisted ep itaxy, especially for multi-ion sources system. (C) 1999 Elsevier Science B .V. All rights reserved.