AuBe Ohmic contacts to p-type ZnTe

Authors
Lan, WH Lin, WJ Cheng, YC Tai, K Tasi, CM Wu, PH Cheng, KH Chou, ST Yang, CM Cheng, YC Huang, KF
Citation
Wh. Lan et al., AuBe Ohmic contacts to p-type ZnTe, ELECTR LETT, 34(25), 1998, pp. 2434-2435
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
34
Issue
25
Year of publication
1998
Pages
2434 - 2435
Database
ISI
SICI code
0013-5194(199812)34:25<2434:AOCTPZ>2.0.ZU;2-I
Abstract
Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effecti ve at improving the electrical properties of p-type contacts to ZnTe.