Influence of accumulation layer on interface trap density extraction

Authors
Sonnenberg, V Martino, JA
Citation
V. Sonnenberg et Ja. Martino, Influence of accumulation layer on interface trap density extraction, ELECTR LETT, 34(25), 1998, pp. 2439-2441
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
34
Issue
25
Year of publication
1998
Pages
2439 - 2441
Database
ISI
SICI code
0013-5194(199812)34:25<2439:IOALOI>2.0.ZU;2-9
Abstract
The accumulation layer effect in the subthreshold slope of silicon-on-insul ator nMOSFETs and in the extraction of the front and back interface trap de nsities is analysed by simulation. A simple method for minimising this effe ct is developed and applied experimentally.