Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

The use of high dose Co+ implantation into hydrogenated amorphous silicon ( a-Si:H) deposited on glass has been investigated for the fabrication of low resistivity layers and Schottky devices without the need for high temperat ure thermal processing. Layer resistivities as tow as 10 Ohm/square have be en achieved for the as-implanted samples and 3 Ohm/square after annealing a t temperatures up to 500 degrees C. Quality Schottky devices have been fabr icated for implant doses as low as 10(16) Co+cm(-2).