This paper describes a high-performance 0.04-mu m PMOSFET with a 7-nm-deep
ultrashallow junction. An ultra-low energy implantation of B10H14+ at 2 keV
(with effective boron energy of 0.2 keV), which does not cause transient-e
nhanced diffusion, is employed for extension formation. To prevent thermal
diffusion, we developed a two-step activation annealing process (2-step AAP
) that forms a shallow extension with low-temperature annealing after deep
source and drain formation. A maximum drive current of 0.40 mA/mu m (@ I-of
f of 1 nA/mu m and V-d = -1.8 V) was achieved, and the smallest PMOSFET (wi
th a L-eff of 0.038 mu m) has been demonstrated for the first time. We also
achieved a low S/D series resistance R-sd Of 760 Ohm-mu m, even when high
sheet resistance (>20 k Ohm/sq) is applied to the extension regions.