Investigations of electron behavior in the gamma 10 tandem mirror on the basis of x-ray analyses using a novel theory on semiconductor detector response

(i) A scaling law and its physics mechanism of potential formation for tand em-mirror plasma confinement are investigated. The first result of a genera lized scaling covering over two typical plasma operational modes in the GAM MA 10 tandem mirror is presented; that is, a previously obtained potential- formation scaling in a plasma operational mode with a few-kV confinement po tentials is found to be extended and generalized to a potential scaling in a hot-ion operational mode with thermal-neutron yield, when we take account of the dependence of potential formation on the ratio of the plug to the c entral-cell densities as well as the relation of electron temperatures in t he central cell to thermal-barrier potentials. The finding of the existence of the same physics basis underlying in these two typical modes may provid e the future possibility of simultaneously obtained hot-ion plasmas with hi gh potentials. (ii) For these scaling studies, we have constructed the phys ics fundamentals of x-ray diagnostics; that is, we proposed a novel theory on the energy response of a widely utilized semiconductor x-ray detector. T he theory solves a serious problem of a recent finding of the invalidity of the conventional standard theory on the response of such an x-ray detector ; the conventional theory has widely been believed and employed over the la st quarter of the century in various research fields including plasma-elect ron researches in most of plasma-confinement devices. The novel theory on t he semiconductor x-ray response is characterized by the inclusion of a thre e-dimensional diffusion of x-ray-produced minority carriers in the field-fr ee substrate of a detector, while the conventional theory is based only on the charges from an x-ray-sensitive depletion layer (i.e., the region of a p-n junction). Various and serious effects of the novel theory on the deter mination of electron temperatures and their radial profiles (i.e., the elec tron-temperature gradient) are also represented.