A GaAs MOSFET with a liquid phase oxidized gate

Low leakage current density (as low as 10(-8) A/cm(2) at an applied voltage of 5 V) and high breakdown electrical held (larger than 4.5 MV/cm) of the liquid phase chemical-enhanced oxidized GaAs insulating layer enable the ap plication to the GaAs MOSFET, The oxide layer is found to the composite of Ga2O3, As, and As2O3. The n-channel depletion mode GaAs MOSFET's are demons trated and the I-V curves with complete pinch-off and saturation characteri stics can be seen. A transconductance larger than 30 mS/mm can be achieved which is even better than those of the MESFET's fabricated on the same wafe r structure.