Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FET's for power application

Single-voltage-supply operation of insulated-gate FET's using Ga0.51In0.49P /In0.15Ga0.85As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate volt age up to 2 V without significant drain current compression. Because of thi s high gate operating voltage, single-voltage-supply operation of Ga0.51In0 .49P/In0.15Ga0.85As insulated-gate FET's was achieved. Preliminary results show that for a 1-mu m gate length device operated at 1.8 GHz under class A -bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated pow er with a power added efficiency of 30% when drain voltage is 4.8 V.