Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

The effects of the different tungsten polycide technologies on the effectiv e channel length and electrical performance of the scaled CMOS transistors with rapid thermal anneal (RTA) have been investigated. Contrary to previou s studies [1], [2], it is found that the sputtered WSiX device has larger r eduction in channel length, Which is confirmed by gate-to-drain overlap cap acitance C-GD measurement. Experiments also indicate that the sputtered WSi X devices possess a lower driving ability. Furthermore, the sputtered WSiX devices have higher off state leakage not only for the short channel but al so for the long channel range, which is different From the previous result [1].