Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching

This work forms a contact hole utilizing the selectively liquid-phase depos ited (S-LPD) silicon-oxide technique instead of the conventional reactive i on etching (RIE), The n(+)/p junction diode with contact hole formed by S-L PD exhibits one order less reverse current, larger forward current, smaller ideality factor, and better thermal stability than that formed by RIE. The Schottky junction with S-LPD contact hole also possesses several excellent characteristics, including ideality factor, reverse current and barrier he ight, even without sintering treatment. These characteristics confirm the e ffectiveness of S-LPD technique in replacing conventional RIE to form conta ct holes, particularly for the ultra-shallow junction in future.