Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

Citation
Yc. Tseng et al., Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's, IEEE ELEC D, 20(1), 1999, pp. 54-56
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
1
Year of publication
1999
Pages
54 - 56
Database
ISI
SICI code
0741-3106(199901)20:1<54:PNCAWL>2.0.ZU;2-B
Abstract
Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for R F IC applications is investigated, The observed correlation between the osc illator's high frequency phase noise and the transistor's low-frequency noi se characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. Th ese results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high f requency domain operation mode of Po Boating body SOI oscillators.