Advances in silicon-on-insulator optoelectronics

Citation
B. Jalali et al., Advances in silicon-on-insulator optoelectronics, IEEE S T QU, 4(6), 1998, pp. 938-947
Citations number
56
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
4
Issue
6
Year of publication
1998
Pages
938 - 947
Database
ISI
SICI code
1077-260X(199811/12)4:6<938:AISO>2.0.ZU;2-K
Abstract
Recent developments in silicon based optoelectronics relevant to fiber opti cal communication are reviewed. Silicon-on-insulator photonic integrated ci rcuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has create d the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabit s-per-second low-noise lightwave electronics, These trends combined with ec onomical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems.