Advances in silicon-on-insulator optoelectronics
Citation
B. Jalali et al., Advances in silicon-on-insulator optoelectronics, IEEE S T QU, 4(6), 1998, pp. 938-947
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
SICI code
1077-260X(199811/12)4:6<938:AISO>2.0.ZU;2-K
Abstract
Recent developments in silicon based optoelectronics relevant to fiber opti
cal communication are reviewed. Silicon-on-insulator photonic integrated ci
rcuits represent a powerful platform that is truly compatible with standard
CMOS processing. Progress in epitaxial growth of silicon alloys has create
d the potential for silicon based devices with tailored optical response in
the near infrared. The deep submicrometer CMOS process can produce gigabit
s-per-second low-noise lightwave electronics, These trends combined with ec
onomical incentives will ensure that silicon-based optoelectronics will be
a player in future fiber optical networks and systems.