Monte Carlo simulation of silicon amorphization during ion implantation

We present a new analytical model to predict the spatial location of amorph ous phases in ion-implanted single-crystalline silicon using results of mul tidimensional Monte Carte simulations. Our approach is based on the concept of the critical damage energy density [1]. Additionally, the self-annealin g of radiation damage during ion implantation is taken into account because this effect is crucial for a correct prediction of amorphization, Two aspe cts of self-annealing are considered, namely, the temperature and the spati al dependence. The latter is related to the local damage energy density, wh ich is simulated by one-, two-. and three-dimensional modules of our Monte Carlo program MCIMPL [2], [3] of the technology CAD framework VISTA [4], [5 ], Therefore, the formation and the shape of amorphous regions in single-cr ystalline silicon can be predicted as a result of Monte Carte simulations o f ion implantation. The suggested model accurately reproduces the results o f direct microscopic observations (XTEM measurements) of amorphous layers i n silicon after a silicon self-implantation, which are available for a temp erature range of 82-296 K [6].