Growth conditions, electrical resistivity, microhardness and thermal properties of Nb5Sn2Ga single crystals synthesized from high-temperature tin solutions

Single crystals of a new ternary intermetallic compound Nb5Sn2Ga were prepa red from high-temperature tin solutions by a self flux method using Nb and Ga metals as starting materials under a He gas. The crystal was examined by X-ray diffraction and chemical analyses. The ternary single crystals Nb5Sn 2Ga were generally obtained in the form of prismatic shape extending in the [001] direction, and with (100) and (110) faces. The Vickers microhardness value on (001) plane and (100) or (110) planes of crystals is in the range of 8.5-10.1 Cpa. The electrical resistivity determined on crystal is in th e range of 253.1-276.7 mu Omega cm. The oxidation of Nb5Sn2Ga crystal start s at about 562 degrees C. The final oxidation products were NbO2, Nb12O29, Nb2O5, SnO2 and Ga2O3. (C) 1998 Elsevier Science S.A. All rights reserved.