Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

The suitability of ditertiarybutylphosphine (DitBuPH) for the low-pressure MOVPE growth of (GaIn)P has been investigated. This source is distinguished by a further reduction of the direct H-functions in the molecule, its liqu id state and its suitable vapour pressure and is therefore advantageous fro m the toxicity and safety viewpoint. The optical and structural properties are compared with those obtained using tertiarybutylphosphine (TBP) and PH3 . Moreover, doping experiments have been carried out using disilane and die thylzine as dopants. No difference in the growth and doping behaviour for a ll three used P-sources could be determined and the data are in good agreem ent with literature values. (C) 1999 Elsevier Science B.V. All rights reser ved.