The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)

Authors
Yu, GY Fan, XW Zhang, JY Yang, BJ Zhao, XW Shen, DZ Lu, YM
Citation
Gy. Yu et al., The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD), J CRYST GR, 196(1), 1999, pp. 77-82
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
196
Issue
1
Year of publication
1999
Pages
77 - 82
Database
ISI
SICI code
0022-0248(199901)196:1<77:TGOZBP>2.0.ZU;2-I
Abstract
ZnSe epitaxy layers were grown on (1 0 0)GaAs substrates by photo-assisted MOCVD using DMZn and DMSe as group II and VI sources, respectively. Irradia tion can improve the growth rate efficiently, but the irradiation intensity influences the growth rate and the crystalline quality negligibly in a lar ge range. Due to an oxidation reaction on the surface of ZnSe, the growth r ate and the flow ratio of group II and VI sources influence the crystalline quality. (C) 1999 Elsevier Science B.V. All rights reserved.