Growth of ZnSe single crystal by CVT method with self-moving convection shield

Authors
Fujiwara, S Namikawa, Y Hirota, Y Irikura, M Matsumoto, K Kotani, T
Citation
S. Fujiwara et al., Growth of ZnSe single crystal by CVT method with self-moving convection shield, J CRYST GR, 196(1), 1999, pp. 83-87
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
196
Issue
1
Year of publication
1999
Pages
83 - 87
Database
ISI
SICI code
0022-0248(199901)196:1<83:GOZSCB>2.0.ZU;2-M
Abstract
The self-moving convection shield was used in the growth of ZnSe single cry stal by chemical vapor transport method using iodine as a transport agent. The reduction of the convection enables the growth of a 1-in diameter ZnSe single crystal. The incorporation efficiency of iodine on (1 1 1)B facet wa s proved re be larger than that on (1 0 0) facet. Impurity-hardening effect of incorporated iodine in the grown ZnSe crystal is also suggested. (C) 19 99 Published by Elsevier Science B.V. All rights reserved.