Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy

The incorporation model of P in Si gas-source molecular beam epitaxy is pre sented. This allows a precise prediction of the P-doping profile for the gr own film. The model consists of adsorption and desorption reactions of P on the surface, two-site exchange reactions of P between the surface (the top layer) and the sub-surface (the second layer), and the incorporation of P to the grown film. To confirm the validity of the model, we have compared t he model prediction with the experimentally obtained data for the P-doping profile. (C) 1999 Elsevier Science B.V. All rights reserved.