Single crystals of CaGdAlO4 that have not been used previously as a substra
te material for HTSC films were grown by Czochralski method and applied for
the deposition of the Bi2Sr2CaCu2O8-x and LuBa2Cu3O7-z thin films. The mai
n advantages of the CaGdAlO4 crystals are sufficiently low dielectric const
ant, appropriate crystal lattice match with most HTSC, fairly high crystal
perfection and reproducibility of the growth process. Bi2Sr2CaCu2O8-x films
were prepared by "off-axis" DC magnetron sputtering and LuBa2Cu3O7-z films
were obtained by flash evaporation MOCVD technique on the (0 0 1) oriented
CaGdAlO4 substrates, (C) 1999 Published by Elsevier Science B.V. All right
s reserved.