Reconstructions of the GaAs (1 1 3) surface

We investigated GaAs (113) surfaces prepared by molecular beam epitaxy (MBE ) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotrop y spectroscopy (RAS) and low energy electron diffraction (LEED) and found t wo different static (non-growth) reconstructions: For many conditions the w ell known (8 x 1) reconstruction is observed, while under more arsenic rich conditions a reconstruction a p(1 x 1) symmetry shows up. The activation e nergy for the transition from the p(1 x 1) to the (8 x 1) reconstruction wa s determined to (1.50 +/- 0.02) eV. A structure model for the arsenic rich p(1 x 1) reconstruction is presented in accordance with the above findings. (C) 1998 Elsevier Science B.V. All rights reserved.