Surface characterization of ordered (GaIn)P

The knowledge of the nature of the sample surface is important to influence and optimize growth processes and to understand growth mechanisms. Here, a study of the surface of ordered (GaIn)P grown on differently misoriented ( 001)GaAs substrates is presented using high-resolution transmission electro n microscopy (HRTEM) and atomic force microscopy (AFM). Whereas the surface of GaAs consists of (001) terraces and bunched supersteps, vicinal regions appear additionally on the (GaIn)P surface. The height of supersteps incre ases with increasing misorientation angle and decreasing growth temperature . The surface morphology has also been investigated as a function of the ph osphorus partial pressure using three different precursors (phosphine, tert iarybutylphosphine, and ditertiarybutylphosphine) and of the zinc doping. M oreover, additional characteristic facets such as (10l), (01l), (h1l), and (1kl) were found. (C) 1998 Elsevier Science B.V. All rights reserved.