Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor deposition

Citation
N. Watanabe et al., Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 48-53
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
48 - 53
Database
ISI
SICI code
0022-0248(199812)195:1-4<48:AEOCIG>2.0.ZU;2-K
Abstract
The annealing condition dependence of the electrical and optical properties in C-doped InGaAs lattice-matched to InP is investigated in detail. It is revealed that hole concentration increases with annealing time at annealing temperatures between 450 degrees C and 550 degrees C due to hydrogen remov al from epilayers. The annealing time for obtaining the maximam hole concen tration is shown to become shorter with higher annealing temperature. It is also found that C accepters are deactivated by annealing at 550 degrees C for more than 5 min, resulting in a decrease of hole concentration, mobilit y and photoluminescense intensity. These deteriorations in both the electri cal and optical quality of C-doped InGaAs might be caused by the transforma tion of C accepters to C donors (on group-III sites) or interstitial C atom s. The optimum annealing condition was applied for the fabrication of InP/I nGaAs heterojunction bipolar transistors, and the good characteristics are successfully demonstrated. (C) 1998 Elsevier Science B.V. All rights reserv ed.