Si and C delta-doping for device applications

Authors
Li, G Johnston, MB Babinski, A Yuan, S Gal, M Chua, SJ Jagadish, C
Citation
G. Li et al., Si and C delta-doping for device applications, J CRYST GR, 195(1-4), 1998, pp. 54-57
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
54 - 57
Database
ISI
SICI code
0022-0248(199812)195:1-4<54:SACDFD>2.0.ZU;2-#
Abstract
Growth conditions have been optimised for Si and C delta-doped AlGaAs at 63 0 degrees C. Very high free carrier densities up to 6 x 10(18) and 3 x 10(1 9) cm(-3), respectively, for Si and C delta-doped AlGaAs, were obtained. Th e key parameters to precisely control delta-doping concentrations were disc ussed. Growth of high quality Si and C delta-doped nipi structures, Si delt a-modulation doped In0.2Ca0.8As/GaAs quantum wells, and high performance Zn -free C delta-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported. (C ) 1998 Elsevier Science B.V. All rights reserved.