Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68
Oxygen-related defects in Al-containing semiconductors can degrade luminesc
ence efficiency and reduce free carrier lifetime affecting the performance
of light emitting devices. We have used the oxygen-doping source, diethylal
uminum ethoxide, (C2H5)(2)AlOC2H5, to intentionally incorporate oxygen-rela
ted defects during growth of In-0.5(AlxGa1-x)(0.5)P by metal-organic vapor
phase epitaxy (MOVPE). Our investigations have identified several defects w
hich are present in nonintentionally oxygen-doped n-type In-0.5(AlxGa1-x)(0
.5)P as well as those due to oxygen. Oxygen introduces defect states near t
he middle of the band gap. Deep level transient spectroscopy and photolumin
escence data obtained over the range of composition 0 < x < 1, are presente
d illustrating the trends in defect structure with alloy composition. (C) 1
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