MOVPE based Zn contact diffusion into InGaAs using DMZn as source material
was investigated. Maximum hole densities above 1 x 10(20) cm(-3) could repr
oducibly be attained. To achieve this, the presence of an appropriate conce
ntration of AsH3 during diffusion proved to be of crucial importance. The Z
n incorporation was found to exponentially increase with decreasing diffusi
on temperature until Zn3As2 starts to deposit on the wafer at approximately
500 degrees C. Due to the use of wafer rotation excellent lateral diffusio
n uniformity as characterized by sheet resistance measurements was obtained
. The MOVPE based diffusion process features several advantages which make
this method superior to existing techniques. (C) 1998 Elsevier Science B.V.
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