Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor

MOVPE based Zn contact diffusion into InGaAs using DMZn as source material was investigated. Maximum hole densities above 1 x 10(20) cm(-3) could repr oducibly be attained. To achieve this, the presence of an appropriate conce ntration of AsH3 during diffusion proved to be of crucial importance. The Z n incorporation was found to exponentially increase with decreasing diffusi on temperature until Zn3As2 starts to deposit on the wafer at approximately 500 degrees C. Due to the use of wafer rotation excellent lateral diffusio n uniformity as characterized by sheet resistance measurements was obtained . The MOVPE based diffusion process features several advantages which make this method superior to existing techniques. (C) 1998 Elsevier Science B.V. All rights reserved.