P. Velling et al., InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport, J CRYST GR, 195(1-4), 1998, pp. 117-123
InGaP/GaAs heterostructures are grown by LP-MOVPE. The InGaP layer embedded
in GaAs and both the upper and the lower interface are characterized by hi
gh resolution X-ray diffraction (HR-XRD) using the (002) reflection, which
is quasi forbidden for GaAs. Thin and center-symmetric InGaP-GaAs-InGaP str
uctures embedded in GaAs result in fringes which can be described using kin
ematical theory. This way both a thickness and composition analysis of InGa
P layers is analytically obtained. Under optimized growth conditions the Ga
As-to-InGaP interface is atomically abrupt while a 1 ML InGaAs interfacial
layer is determined at the InGaP-to-GaAs interface. This asymmetry results
in different hole-barrier functionality which is proven by low temperature
I-V-characterization of p-type double barrier resonant tunneling diode (DB-
RTD). (C) 1998 Elsevier Science B.V. All rights reserved.