InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport

Citation
P. Velling et al., InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport, J CRYST GR, 195(1-4), 1998, pp. 117-123
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
117 - 123
Database
ISI
SICI code
0022-0248(199812)195:1-4<117:IHBADB>2.0.ZU;2-U
Abstract
InGaP/GaAs heterostructures are grown by LP-MOVPE. The InGaP layer embedded in GaAs and both the upper and the lower interface are characterized by hi gh resolution X-ray diffraction (HR-XRD) using the (002) reflection, which is quasi forbidden for GaAs. Thin and center-symmetric InGaP-GaAs-InGaP str uctures embedded in GaAs result in fringes which can be described using kin ematical theory. This way both a thickness and composition analysis of InGa P layers is analytically obtained. Under optimized growth conditions the Ga As-to-InGaP interface is atomically abrupt while a 1 ML InGaAs interfacial layer is determined at the InGaP-to-GaAs interface. This asymmetry results in different hole-barrier functionality which is proven by low temperature I-V-characterization of p-type double barrier resonant tunneling diode (DB- RTD). (C) 1998 Elsevier Science B.V. All rights reserved.