Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBA

Growth of InP and InGaAsP using tertiarybutylphosphine (TBP) and tertiarybu tylarsine (TBA) with a showerhead stagnation flow vertical reactor is repor ted for the first time. In a close-spaced showerhead design with an inlet-s usceptor spacing of 1-2 cm, thermal decomposition of TBP and TEA and subseq uent coating on the showerhead may affect the reproducibility. This can be prevented by keeping the total flow rate above the minimum value depending on the spacing. The group III element incorporation is controlled by the mo mentum boundary-layer thickness. The group V composition and Si doping by d isilane are controlled by the gas sweep speed which determines precursor de composition, while Zn doping by diethylzinc is controlled by its partial va por pressure. While taking a full advantage of the uniformity, most of the growth condition changes caused by the total flow rate or the reactor press ure are quantitatively explained because the gas flow pattern is determined almost exclusively by reactor geometry. (C) 1998 Elsevier Science B.V. All rights reserved.