In situ characterisation of MOVPE by surface photoabsorption II. Interfacemonitoring

Authors
Klipstein, PC Lyapin, SG Mason, NJ Walker, PJ
Citation
Pc. Klipstein et al., In situ characterisation of MOVPE by surface photoabsorption II. Interfacemonitoring, J CRYST GR, 195(1-4), 1998, pp. 168-173
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
168 - 173
Database
ISI
SICI code
0022-0248(199812)195:1-4<168:ISCOMB>2.0.ZU;2-3
Abstract
Surface photoabsorption (SPA) is an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. When used in conjunction with UV absorp tion, it gives information about the strain associated with the growth of i deal (one monolayer) and nonideal (more than one monolayer) GaAs interfaces in InAs/GaSb superlattices. Raman scattering has been used as an ex situ t echnique for quantifying the strain in these superlattices. It is found tha t the LO frequency blue shifts by 3 cm(-1) when nonideal interfaces are gro wn. (C) 1998 Elsevier Science B.V. All rights reserved.