Effect of the growth rate and the barrier doping on the morphology and theproperties of InGaN/GaN quantum wells

InGaN/GaN single and multi quantum wells have been grown by metal-organic c hemical vapor deposition, varying the growth rate of well and barrier layer s as well as the Si-doping of the GaN barriers. Separately, the effect of t hese growth parameters on the surface morphology of thin GaN and InGaN laye rs grown under the same conditions had been studied. The surface morphology of the layers strongly influenced the structural properties of the multi q uantum wells. The optical properties seemed to be less affected by the obse rved layer thickness fluctuations in the 200-500 nm range rather than by va riations in the indium composition on a shorter length scale. (C) 1998 Else vier Science B.V. All rights reserved.