Influence of buffer layers on the In-content of GaInN layers

In this work we have studied the influence of different buffer layers on th e composition of GaInN layers grown by LP-MOVPE. We obtained the indium-con tent in these layers by XRD-measurements of the symmetrical reflex (0 0 2) and asymmetrical reflexes, for example (1 0 5). GaInN layers of about 100 n m thick ness were grown at 750 degrees C on different (Al,In)GaN buffer lay ers. We found that the In-content in GaInN changes with the buffer material up to 50%. Moreover, reciprocal space maps showed large variations of rela xation of the GaInN. For example GaInN layers grown on GaN buffer are almos t fully strained. However, GaInN on AIN is largely relaxed. (C) 1998 Publis hed by Elsevier Science B.V. All rights reserved.