High quality III-nitride material grown in mass production MOCVD systems

We present some of the latest results obtained from single wafer horizontal tube reactors (AIX 200RF) and multiwafer planetary reactors(R) (AIX 2000HT ) as used for MOVPE of blue LEDs. The AIX 2000HT was set up in a configurat ion of 7 x 2 " which provides unique uniformity capabilities due to the two fold rotation of the substrates. Composition uniformity of ternary materia l determined by 300 K PL-mappings show peak wavelength variations typically about 1 nm for AlGaN and GaInN. Our latest results are based on studies of various heterointerfaces in the GaInN/GaN system. GaInN single/hetero laye rs were investigated to optimise photoluminescence properties. Several appr oaches of capping GaInN/GaN with another GaN layer to develop high quality DH (doublehetero) structures are presented. Using an optimised interfacing technique we obtained device quality DH structures with state of the art co mposition uniformity across 2 " wafers. The information obtained in the inv estigation of these DH structures was used to produce high quality SQW (sin gle quantum well) and MQW (multi quantum well) structures. (C) 1998 Elsevie r Science B.V. All rights reserved.