Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high spee d rotating disk reactor (RDR). The devices contain AlAsSb claddings and str ained InAsSb active regions. These emitters have multi-stage, type I, InAsS b/lnAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsS b is the electron confinement layer. These structures are the first MOCVD m ulti-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LEDs pr oduced 2 mW average power at 3.7 mu m and 80 K and 0.1 mW at 4.3 mu m and 3 00 K. A multi-stage, 3.8-3.9 mu m laser structure operated up to T = 180 K. At 80 K, peak-power > 100 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers. (C) 1998 Elsevier Science B.V. All ri ghts reserved.