p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy

P-type and n-type GaSb and Ga0.8In0.2Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane an d diethyltellurium (DETe) as the dopant precursors, respectively. Hall meas urements show that the concentration and mobility of holes and electrons in GaSb and Ga0.8In0.2Sb are higher when the layers are grown on GaSb substra tes than when grown on GaAs substrates. Secondary ion mass spectrometry (SI MS) results show that the incorporation of Si and Te is higher when GaSb su bstrates are used. The electron concentration increased from 5 x 10(16) to 1.5 x 10(18) cm(-3) as the Te concentration was increased from 1 x 10(17) t o 5 x 10(18) cm(-3). AS the Te concentration was increased further, the ele ctron concentration decreased, with only about 1% of the Te electrically ac tive at a Te concentration of 2 x 10(20) cm(-3). (C) 1998 Elsevier Science B.V. All rights reserved.