Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP

Selective planar regrowth of high resistivity (as high as 10(9) Omega cm) F e-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial l ayers were grown on patterned, nonplanar heterostructure mesa by low-pressu re organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphin e (TBP), trimethylindium (TMI) and iron dicyclopentadienyle (Fe(C5H5)(2)) a s the reactant gases. The shape of the growth around masked mesas without a ny overhang of the mask has been studied as a function of both the growth c onditions and the mesa height. Finally, an optimization of the growth condi tions has been performed to planarize ridges as high as 2 mu m, the layer q uality being characterized by SEM. (C) 1998 Elsevier Science B.V. All right s reserved.