Selective growth and regrowth of high Al content AlGaAs for use in BH lasers

We demonstrate an enabling technology approach for fabricating selectively grown BH lasers by MOCVD based on selectively growth and regrowth of AlAs a nd AlGaAs. Carrier and light confining layers as well as current blocking l ayers in ultralow threshold current VCSELs and WDM VCSEL arrays are enabled by our results. We present techniques for regrowth of active layers of las ers as well as selective growth of AlAs current blocking layers (CBL). The techniques are employed for the growth of a three step AlGaAs/GaAs/InGaAs l aser with comparable performance to devices grown in a single step and to d emonstrate the use of selectively grown AlAs native oxide layers as CBL in BH lasers. Three step BH InGaAs quantum well edge emiting lasers with an Al As native oxide CBL have been fabricated using selective growth and regrowt h techniques. We also demonstrate a three step grown vertical cavity surfac e emitting laser with an AlAs native oxide CBL using these techniques. (C) 1998 Published by Elsevier Science B.V. All rights reserved.