Resonant self-organization in semiconductor growth

We describe, for the first time, resonant self-organization using a novel t echnique that combines selective epitaxy with the Turing-type self-organiza tion phenomenon in the InGaAs/AlGaAs system on GaAs (3 1 1)B surface during metalorganic vapor-phase epitaxy. The resonant self-organization indicates a direct experimental evidence of nonlinear cooperative phenomenon in semi conductor growth. (C) 1998 Elsevier Science B.V. All rights reserved.