InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation

We present structural and optical properties of InAsP and InGaAs quantum wi re structures in situ grown by MOCVD utilizing arsenic/phosphorus exchange as the preparation method in InP V-grooves. Transmission electron microscop y images show defect free structures. Optical spectroscopy methods reveal a ground state luminescence at 1.163 eV for InAsxP1-x wires. The emission en ergy can be varied by several 10's of meV by growing InGaAs after the excha nge process. We report also on InxGa1-xAs quantum wires with ground state e msission at 9.970 eV. The homogeneity of these wires is strongly enhanced c ompared to previous InGaAs/InP quantum wires grown in InP V-grooves. (C) 19 98 Elsevier Science B.V. All rights reserved.