Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinatedcompounds

Four different chlorinated compounds: 2-chloropropane, dichloromethane, chl oroform and carbon tetrachloride have been used to etch InGaAsP/InP MQW las er structures partially masked. Etching experiments were performed in a hom e-made LP-MOCVD reactor with argon or argon + hydrogen as carrier gas, usin g phosphine (PH3) or tertiarybutylphosphine (TBP) to prevent thermal decomp osition. The etching temperature as well as the chlorinated compound flow w ere varied to obtain the best trade-off between etch rate and surface morph ology. The optimized experimental conditions were applied to etch mesa stri pes in a SCH-MQW laser structure, for the first time to our knowledge, foll owed by lateral InP : Fe regrowth in the same step. Threshold current as lo w as 4 mA (best value)-6 mA (typical value) and differential quantum effici ency higher than 20% for SI-BM MQW laser have been achieved. (C) 1998 Elsev ier Science B.V. All rights reserved.