GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP

GaAs-based vertical cavity surface emitting laser structures (VCSEL) with s train-compensated (GaIn)As/Ga(PAs) multiple quantum well heterostructures ( MQWH) active regions have been deposited using the less hazardous, liquid g roup-V-sources tertiarybutyl arsine (TBAs) and tertiary butyl phosphine (TB P) in metal organic vapour phase epitaxy (MOVPE). We report on growth optim ization, characterization of the VCSEL structures, and ultrafast emission d ynamics after femtosecond optical excitation. The improved decomposition ch aracteristics of the alternative compounds yield a small variation in the c avity thickness of only +/-0.35% across the 2 " wafer. The high quality of the VCSEL structures having a 2 lambda cavity with 4 stacks of 3 (GaIn)As/G a(PAs)-MQWH and AlAs/GaAs-Bragg mirrors is revealed by the large normal mod e splitting of 10.6 meV. Excellent pulse response with a pulse width of 3.2 ps and a peak delay of 4.8 ps at 30 K is obtained after femtosecond optica l excitation. The high crystalline perfection with respect to layer homogen eity, optical properties as well as ultrafast emission dynamics demonstrate the advantages of the strain-compensated material system for VCSEL structu res grown by MOVPE using TBAs and TBP. (C) 1998 Elsevier Science B.V. All r ights reserved.