MOCVD growth of high power 0.5 W 35 GHz MMICs

This paper reports the development of low-cost microwave millimeter integra ted circuits (MMIC) devices. This was achieved through the use of multi-waf er MOCVD to reduce the starting material cost, and device fabrication with a tightly controlled process optimized for the epitaxial structure. A 35 GH z 0.5 W power amplifier MMIC was designed that can be applied in Ka-band wi reless applications. MOCVD-grown wafers were fabricated using mask sets bas ed on this design. Completed wafers yielded 5.55 x 3.2 mm MMIC chips with s aturated output power of over 0.50 W at 34 GHz and 0.46 W at 35 GHz. With a further design iteration it is believed that one (1) watt output power cou ld be obtained from the device. During this work it was demonstrated that M OCVD p-HEMT wafers could be used interchangeably with MBE wafers as startin g material for MMIC fabrication, (C) 1998 Elsevier Science B.V. All rights reserved.