The influence of trimethylindium impurities on the performance of InAlGaAssingle quantum well lasers

Authors
Roberts, JS David, JPR Smith, L Tihanyi, PL
Citation
Js. Roberts et al., The influence of trimethylindium impurities on the performance of InAlGaAssingle quantum well lasers, J CRYST GR, 195(1-4), 1998, pp. 668-675
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
668 - 675
Database
ISI
SICI code
0022-0248(199812)195:1-4<668:TIOTIO>2.0.ZU;2-T
Abstract
Three sources of trimethylindium (TMI) have been used to prepare single qua ntum well (SQW) In-x(AlyGa1-y)(1-x)As GRINSCH lasers by MOVPE. Residual oxy gen-based impurities in TMI have been shown to reduce laser lifetime for de vices delivering about 1 W CW. The investigation covers two wavelength band s of approximately 730 and 800 nm where,x less than or equal to 0.17. (C) 1 998 Elsevier Science B.V. All rights reserved.