MOVPE growth of tunable DBR laser diode emitting at 1060 nm

Tunable laser diodes emitting at 1060 nm have been grown by metalorganic va por-phase epitaxy (MOVPE). For the growth of the highly strained InGaAs/GaA s quantum well (QW) high growth rates are found favorable to suppress defec t formation. Laser diodes using such QWs in GaAs waveguide and AlGaAs cladd ing layers show very low threshold (j(th) = 104 mA) and transparency curren t densities (j(T) = 53 A cm(-2)). These low values are preserved when the g rowth is interrupted after the upper GaAs waveguide and a grating is proces sed. Three sectional laser diodes having a distributed Bragg reflector grat ing section, a phase shift and a gain section have a very small linewidth o f 0.85 MHz at 30 mW and a tuning range of 300 GHz. (C) 1998 Elsevier Scienc e B.V. All rights reserved.