Specific features of electron structures of some thin film d-silicides

Citation
Ep. Domashevskaya et Ya. Yurakov, Specific features of electron structures of some thin film d-silicides, J ELEC SPEC, 96(1-3), 1998, pp. 195-208
Citations number
31
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
96
Issue
1-3
Year of publication
1998
Pages
195 - 208
Database
ISI
SICI code
0368-2048(199811)96:1-3<195:SFOESO>2.0.ZU;2-#
Abstract
The Si L-2,L-3-spectra of thin films of transition d-metal (TM) silicides ( d-silicides) obtained by the ultrasoft X-ray emission spectroscopy (USXES) method have been analyzed on the basis of our d-s,p resonance model. Differ ent stoichiometric composition silicides were obtained depending on the ann ealing conditions of heterostructures TM/Si mono TM/SiO2/Si mono. Compared with the spectra of the bulk samples, Si L-2,L-3-spectra of thin film silic ides demonstrate an increased intensity in the high energy range near the F ermi level. The unique sharp intensive peak of the Si s-state at the Fermi level is a consequence of the distinction of d-s resonance in NiSi2. (C) 19 98 Elsevier Science B.V. All rights reserved.