EFFECT OF THE FIELD-DEPENDENT PERMITTIVITY AND INTERFACIAL LAYER ON BA1-XKXBIO3 NB-DOPED SRTIO3 SCHOTTKY JUNCTIONS/

The electrical properties of Ba1-xKxBiO3/Nb-doped SrTiO3 all-oxide-typ e Schottky junctions base been investigated by measuring their current -voltage and capacitance-voltage (C-V) characteristics at room tempera ture. The relative permittivity epsilon(r) of Nb-doped SrTiO3 could be approximated as epsilon(r)(E) = b/root a+E-2, where E is the electric field, a and b are constants. Taking into account the field dependent permittivity and interfacial layer, we carried out a quantitative ana lysis of the potential barrier and 1/C-2-V characteristics. The non-li near 1/C-2-V characteristics could be quantitatively explained by cons idering the field dependent permittivity and the bias dependence of th e barrier height due to the presence of the interfacial layer.