UNIPOLAR DARLINGTON INFRARED PHOTOTRANSISTOR

A novel unipolar infrared photodetector - the Darlington infrared phot otransistor (DIPT) - is proposed and evaluated. The DIPT is the integr ation of a quantum-well infrared photodetector, utilizing the electron intersubband transitions, and a hot-electron transistor. The operatio n principle of the DIPT is considered. Its performance is estimated us ing an analytical model. It is shown that the DIPT can exhibit very la rge responsivity. DIPTs may be useful for new detectors of infrared ra diation of wavelength longer than 2 mu m.