Diffusion of noble metals, Zn and Ge in GaSb single crystals

Citation
Km. Nassr et al., Diffusion of noble metals, Zn and Ge in GaSb single crystals, J THERM ANA, 54(1), 1998, pp. 49-56
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
ISSN journal
13886150 → ACNP
Volume
54
Issue
1
Year of publication
1998
Pages
49 - 56
Database
ISI
SICI code
1388-6150(1998)54:1<49:DONMZA>2.0.ZU;2-0
Abstract
Diffusion of Cu, Ag, Au, Ge and Zn in single crystal gallium antimonide has been carried out by measuring Hall effect according to van der Pauw, condu ctivity, energy dispersive X-ray (EDX) and surface electron microscopy. The best results have been obtained in excess of antimony. The resulting diffu sion data in GaSb are diffusivity D-o, activation enthalpy Q, carrier densi ty p and mobility mu at 300 K: Ag: D-o=1.8.10(-4) cm(2) s(-1), Q=1.2 eV, p=6.10(18) cm(-3) mu=550 cm(2) (V s)(-1), Au: D-o=6.6.10(+3) cm(2) s(-1), Q=2.7 eV, p=5.10(18) cm(-3), mu=500 cm(2) ( Vs)(-1), Cu: D-o=3.2.10(+8) cm(2) s(-1), Q=2.7 eV, p=2.10(18) cm(-3), mu=150 cm(2)(V s)(-1), Zn: D-o=9.2.10(-2) cm(2) s(-1), Q=1.8 eV, p=2.10(20) cm(-3) mu= 80 cm(2) (V s)(-1), Ge: D-o=1.0.10(-1) cm(2) s(-1), Q=1.7 eV, p=1.10(19) cm(-3), mu=320 cm(2) ( Vs)(-1).